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Anti-Parallel APT2x60DQ100J
Parallel APT2X61DQ100J
ISOTOP (R)
SO
2 T-
27
"UL Recognized"
file # E145592
APT2X61DQ100J 1000V 60A APT2x60DQ100J 1000V 60A
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode
-Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
* Uninterruptible Power Supply (UPS) * Induction Heating * High Speed Rectifiers MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2x61_60DQ100J UNIT
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 90C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range
1000
Volts
60 77 540 20 -55 to 175
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 1000V VR = 1000V, TJ = 125C MIN TYP MAX UNIT
2.2 2.67 1.68
2.8
Volts
500 80
A pF
053-4233 Rev B
7-2006
100
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -1000A/s VR = 667V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 667V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 667V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x61_60DQ100J
TYP MAX UNIT ns nC
36 235 445 5 285 2290 13 125 4170 50 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions RJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
.56 2500 1.03 29.2 10 1.1
oz
g lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.60 , THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 D = 0.9
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
JC
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
7-2006
0.148 Dissipated Power (Watts) 0.006 0.0909 0.524 0.238
TC (C)
0.174 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
053-4233 Rev B
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
200 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = 25C TJ = -55C trr, REVERSE RECOVERY TIME (ns)
350 300 250 60A 200 120A
APT2x61_60DQ100J
T = 125C J V = 667V
R
30A 150 100 50
0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 6000 Qrr, REVERSE RECOVERY CHARGE (nC) 5000
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 60 50 40 30 20
T = 125C J V = 667V
R
0
120A
120A
4000
60A
3000 2000 1000 0
60A 30A
30A
10 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr 1.0 trr IRRM Qrr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 90 80 70 IF(AV) (A) 60 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
0.8 0.6 0.4 0.2
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 400 CJ, JUNCTION CAPACITANCE (pF) 350 300 250 200
0.0
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
053-4233 Rev B
7-2006
150
APT2x61_60DQ100J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
7-2006
1.95 (.077) 2.14 (.084)
Anti-parallel
APT2X60DQ100J
Parallel Cathode 1 Cathode 1
APT2X61DQ100J
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Anode 2
Anode 1
053-4233 Rev B
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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